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Gallium oxide is an ultra-wide bandgap semiconductor with a large bandgap (4.8 eV), high critical breakdown field strength (8MV/cm), conduction characteristics almost 10 times that of silicon carbide, and material growth costs lower than The third-generation semiconductor has received more and more attention and research interest in the fields of ultraviolet light communication and high-frequency power devices.
Product Description
Gallium oxide is an ultra-wide bandgap semiconductor with a large bandgap (4.8 eV), high critical breakdown field strength (8MV/cm), conduction characteristics almost 10 times that of silicon carbide, and material growth costs lower than The third-generation semiconductor has received more and more attention and research interest in the fields of ultraviolet light communication and high-frequency power devices. In the future, gallium oxide is very likely to become the leader in high-power and high-voltage applications.
main feature
It is a direct wide-bandgap semiconductor material with a large breakdown electric field, and it is easy to obtain large-sized crystals .
Typical application
Laser devices, accelerator and radar systems, sensors, image sensors for visualization, antennas, filters and on-chip circuits.
In addition, it is widely used in optical technology - it can be used to make deformable mirrors, BK7 lenses, video lens controllers and high-performance imaging systems.
Product parameters
| Lattice constant | a=12.23Å, b=3.04Å, c=5.80Å, ß=103.7° |
| crystal direction | <100>,<010> |
| Moh's hardness | 9 (mohs) |
| density | 5.88 (g/cm 3 ) |
| melting point | 1725°C |
| doping | Si , Fe |
| Conductivity | n-type , semi-insulating |
| Planes | (001) |
| dislocation density | ＜1×10 5 cm -2 |
| reference edge | [010] Direction |
| crystal plane deviation | ＜±1° |
| size | D 50.8 mm±0.3 mm , or customized |
| thickness | 0.65 mm ± 0.02 mm |
| polishing | Ra < 1nm |
| Package | Class 100 packaging bag |
